Registration mark formation during sidewall image transfer process

ABSTRACT

Methods of forming a registration mark such as an alignment mark or overlay mark during formation of sub-lithographic structures are provided. Methods may include forming a plurality of mandrels over a hard mask over a semiconductor layer, each mandrel including a spacer adjacent thereto. At least one mandrel is selected of the plurality of mandrels and a mask is formed over the at least one selected mandrel. The plurality of mandrels are removed leaving the spacers, the mask preventing removal of the at least one selected mandrel. The mask is removed. A first etching patterns the sub-lithographic structures and the registration mark into the hard mask using the spacers as a pattern of the sub-lithographic structure and the at least one selected mandrel and adjacent spacer for the registration mark. A second etching forms the sub-lithographic structures in the semiconductor layer using the patterned hard mask and to form the registration mark in the semiconductor layer using the at least one selected mandrel and the patterned hard mask.

BACKGROUND

1. Technical Field

The present invention relates to registration mark such as an alignmentor overlay mark, and more specifically, to methods of forming aregistration mark during sidewall image transfer for sub-lithographicstructure formation, and the resulting semiconductor structure.

2. Related Art

Photolithography is a technique for transferring an image rendered onone media onto another media photographically. Photolithographytechniques are widely used in semiconductor fabrication. Typically, acircuit pattern is rendered as a positive or negative mask image whichis then projected onto a silicon substrate coated with photosensitivematerials (e.g., PR). Radiation impinges on the masked surface tochemically change those areas of the coating exposed to the radiation,usually by polymerizing the exposed coating. The un-polymerized areasare removed, being more soluble in the developer than the polymerizedregions, and the desired image pattern remains.

In the microelectronics industry as well as in other industriesinvolving construction of microscopic structures (e.g., micromachines,magnetoresistive heads, etc.) there is a continued desire to reduce thesize of structural features and microelectronic devices and/or toprovide a greater amount of circuitry for a given chip size.Miniaturization in general allows for increased performance (moreprocessing per clock cycle and less heat generated) at lower powerlevels and lower cost. Present technology is at atomic level scaling ofcertain micro-devices such as logic gates, FETs and capacitors, forexample. Circuit chips with hundreds of millions of such devices arecommon.

In order to achieve further size reductions exceeding the physicallimits of trace lines and micro-devices that are embedded upon andwithin their semiconductor substrates, techniques that exceedlithographic capabilities have been employed. Sidewall image transfer(SIT), also known as self-aligned double patterning (SADP), is one suchtechnique to generate sub-lithographic structures. SIT involves theusage of a sacrificial structure (e.g., a mandrel, typically composed ofa polycrystalline silicon), and a sidewall spacer (such as silicondioxide or silicon nitride, for example) having a thickness less thanthat permitted by the current lithographic ground rules formed on thesides of the mandrel (e.g., via oxidization or film deposition andetching). After removal of the mandrel, the remaining sidewall spacer isused as a hard mask (HM) to etch the layer(s) below, for example, with adirectional reactive ion etch (RIE). Since the sidewall spacer has asub-lithographic width (less than lithography allows), the structureformed in the layer below will also have a sub-lithographic width. Inaddition, side wall spacer at both side of sacrificial structure doublespatter density, resulting in final pitch half of the originalsacrificial pattern pitch.

One challenge created by the creation of sub-lithographic structuresusing SIT is creating proper registration marks such as alignment andoverlay marks. The requirement to ensure alignment of tools and/orproper overlay of successive patterned layers on a semiconductor waferduring fabrication are two of the most important processes in themanufacture of integrated circuits. Overlay marks are used to ensureoverlay accuracy during IC manufacture. Overlay precision relates to thedetermination of how precise a first patterned layer aligns with asuccessive patterned layer positioned below or above the first layer,and how well the patterns align. Alignment marks are used to aligndifferent tools, such as reticles, to the semiconductor wafer.Conventionally, registration marks such as alignment and overlay marksare created with the layers of the wafer. In particular, a registrationmark could be drawn in relatively large planar slab to create a goodquality signal for mark identifying equipment. With SIT processes,however, to achieve a maximum density of material, designs must be at aminimum pitch and orientation, which limits the availability ofstructures that can be generated. Consequently, creation of registrationmarks during SIT processes that have good contrast and/or are capable ofcreating a good quality signal, especially outside of minimum designsize, is challenging.

SUMMARY

A first aspect of the invention is directed to a method of forming aregistration mark during formation of sub-lithographic structures on asubstrate, the method comprising the steps of: forming a plurality ofmandrels over a hard mask over a semiconductor layer, each mandrelincluding a spacer adjacent thereto; selecting at least one selectedmandrel of the plurality of mandrels and forming a mask over the atleast one selected mandrel; removing the plurality of mandrels leavingthe spacers, the mask preventing removal of the at least one selectedmandrel; removing the mask; first etching to pattern thesub-lithographic structures and registration mark into the hard mask,using the spacers as a pattern of the sub-lithographic structure and theat least one selected mandrel and adjacent spacer for the registrationmark; and second etching to form the sub-lithographic structures in thesemiconductor layer using the patterned hard mask and to form theregistration mark in the semiconductor layer using the at least oneselected mandrel and the patterned hard mask.

A second aspect of the invention includes a method of forming aregistration mark during formation of sub-lithographic structures on asubstrate, the method comprising the steps of: forming a plurality ofmandrels over a hard mask over a semiconductor layer; forming aconformal spacer material covering a top and side of the mandrels and inbetween the mandrels; selecting at least one selected mandrel andforming a mask over the at least one selected mandrel; forming a spaceradjacent each of an uncovered group of the plurality of the mandrelsthat are uncovered by the mask; removing the uncovered group of mandrelsuncovered by the mask leaving the spacers, while preventing removal ofthe at least one selected mandrel using the mask; removing the mask;first etching to pattern the sub-lithographic structures into the hardmask, using the spacers as a pattern of the sub-lithographic structure;and second etching to: form the sub-lithographic structures in thesemiconductor layer using the patterned hard mask, and form theregistration mark over the semiconductor layer using the at least oneselected mandrel.

A third aspect of the invention related to a semiconductor structure ona substrate, the semiconductor structure comprising: a registration markincluding lithographic sized features; and a plurality ofsub-lithographic structures adjacent to the registration mark.

The foregoing and other features of the invention will be apparent fromthe following more particular description of embodiments of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of this invention will be described in detail, withreference to the following figures, wherein like designations denotelike elements, and wherein:

FIGS. 1-6 show cross-sectional views of a semiconductor structureundergoing processing according to embodiments of the invention.

FIG. 7A shows a cross-sectional view of a semiconductor structureaccording to embodiments of the invention.

FIG. 7B shows a plan view of a semiconductor structure of FIG. 7A.

FIGS. 8-13 show cross-sectional views of a semiconductor structureundergoing processing according to alternative embodiments of theinvention.

FIG. 14 shows a cross-sectional view of a semiconductor structureaccording to embodiments of the invention.

FIG. 15 shows a plan view of a semiconductor structure of FIG. 14.

DETAILED DESCRIPTION

Referring to the drawings, a method of forming a registration mark 100(FIGS. 7A and 7B) during formation of sub-lithographic structures and aresulting semiconductor structure 180 (FIG. 7A) according to embodimentsof the invention is illustrated. As used herein, “registration mark” maybe configured to include either an alignment mark or an overlay mark.The function of registration mark formed according to embodiments of theinvention can be determined after the processing described herein toprovide an alignment mark or an overlay mark.

As shown in FIG. 1, a method may originate with asemiconductor-on-insulator (SOI) substrate 108. SOI substrate 108 mayinclude a semiconductor-on-insulator (SOI) layer 110 (hereinafter“semiconductor layer 110”) that overlays an insulator layer 112.Insulator layer 112 may be positioned over a substrate 114.Semiconductor layer 110 and substrate 114 may include any now known orlater developed semiconductor material including but not limited tosilicon, germanium, silicon germanium, silicon carbide, and thoseconsisting essentially of one or more III-V compound semiconductorshaving a composition defined by the formulaAl_(X1)Ga_(X2)In_(X3)As_(Y1)P_(Y2)N_(Y3)Sb_(Y4), where X1, X2, X3, Y1,Y2, Y3, and Y4 represent relative proportions, each greater than orequal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1 (1 being the total relativemole quantity). Other suitable substrates include II-VI compoundsemiconductors having a composition Zn_(A1)Cd_(A2)Se_(B1)Te_(B2), whereA1, A2, B1, and B2 are relative proportions each greater than or equalto zero and A+A2+B1+B2=1 (1 being a total mole quantity). Furthermore, aportion or entire semiconductor layer/substrate may be strained. Forexample, semiconductor layer 110 may be strained. Insulator layer 112material may include, for example, silicon oxide SiO₂. However,insulator layer 112 may include any interlayer dielectric such as butnot limited to: silicon nitride (Si₃N₄), silicon oxide (SiO₂),fluorinated SiO₂ (FSG), hydrogenated silicon oxycarbide (SiCOH), porousSiCOH, boro-phospho-silicate glass (BPSG), silsesquioxanes, carbon (C)doped oxides (i.e., organosilicates) that include atoms of silicon (Si),carbon (C), oxygen (O), and/or hydrogen (H), thermosetting polyaryleneethers, SiLK (a polyarylene ether available from Dow ChemicalCorporation), a spin-on silicon-carbon containing polymer materialavailable from JSR Corporation, other low dielectric constant (<3.9)material, or layers thereof. The precise thickness of insulating layer112 and semiconductor layer 110 may vary widely with the intendedapplication.

SOI substrate 108 including a silicon oxide insulator layer 112 can beproduced by several methods. First, separation by implantation of oxygen(SIMOX) uses an oxygen ion beam implantation process followed by hightemperature annealing to create a buried SiO₂ layer. Wafer bondingincludes forming insulating layer 112 on a second substrate and bydirectly bonding to first substrate 114 with insulator layer 112contacting to first substrate 114. The majority of the second substrateis subsequently removed, the remnants forming the topmost semiconductorlayer 110. Seed methods may also be employed in which semiconductorlayer 110 is grown directly on insulator layer 112. Seed methods requiresome sort of template for homo-epitaxy, which may be achieved bychemical treatment of insulator layer 112, an appropriately orientedcrystalline insulator, or vias through the insulator from the underlyingsubstrate. While the description of embodiments of the invention will beillustrated relative to an SOI substrate 108 (hereinafter “substrate108”), it is emphasized that teachings of the invention are equallyapplicable to a bulk semiconductor substrate.

FIG. 1 shows a region 120 that is intended for sidewall image transfer(SIT) processing. SIT processed structures may include anysub-lithographic sized structures, e.g., less than approximately 76nanometer pitch or any dimensional limit later developed lithographictechnology attains. In this instance, SIT formed structures may besub-42 nanometer pitch.

FIG. 1 also shows forming a hard mask 130 over semiconductor layer 110.Hard mask 130 may be formed prior to forming a plurality of mandrels140, as will be described. The term “mask” may be given to a layer ofmaterial which is applied over an underlying layer of material, andpatterned to have openings, so that the underlying layer can beprocessed where there are openings. After processing the underlyinglayer, the mask may be removed. Common masking materials are nitride,oxide, low-k or high-k dielectrics. These materials are usuallyconsidered to be a “hard mask.” In the instant case, hard mask 130 mayinclude, for example, a pad silicon nitride (Si₃N₄) layer over athinner, pad oxide (SiO₂) layer. While hard mask 130 may have variousthicknesses, in one example, the pad oxide layer may be approximately2-5 nm of CVD oxide or thermal oxide, and the pad nitride layer may beapproximately 20-50 nm.

As also shown in FIG. 1, methods according to embodiments of theinvention may include forming a plurality of mandrels 140 over hard mask130 over semiconductor layer 110. Mandrel formation may be performed aspart of a sidewall image transfer (SIT) process. While four mandrels140A-140D have been illustrated, it is understood that any number ofmandrels may be provided. Each mandrel 140A-D may have a spacer 144adjacent thereto. In one embodiment mandrels 140A-D, may includepolysilicon, amorphous silicon, amorphous carbon, etc. Mandrels 140A-Dmay be formed by depositing sacrificial material and then patterning thesacrificial material into the plurality of material blocks in any nowknown or later developed manner. “Depositing” may include any now knownor later developed techniques appropriate for the material to bedeposited including but are not limited to, for example: chemical vapordeposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD),semi-atmosphere CVD (SACVD) and high density plasma CVD (HDPCVD), rapidthermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reactionprocessing CVD (LRPCVD), metalorganic CVD (MOCVD), sputteringdeposition, ion beam deposition, electron beam deposition, laserassisted deposition, thermal oxidation, thermal nitridation, spin-onmethods, physical vapor deposition (PVD), atomic layer deposition (ALD),chemical oxidation, molecular beam epitaxy (MBE), plating, evaporation.The patterning may include using any conventional photoresist, exposingit and etching accordingly to create mandrels 140, followed byphotoresist strip.

Spacers 144 may then be formed over semiconductor layer 110 and, moreparticularly, hard mask 130 adjacent to the walls of mandrels 140A-D.Spacers 144 may be formed, for example, by depositing a spacer layerover each mandrel 140 such as a thin conformal oxide layer. An etchingmay then be performed to form spacers 144, and expose a surface of hardmask 130 between mandrels 140 and expose a top of each mandrel 140. Theetch may include, for example, an anisotropic etch to remove theconformal oxide layer from the top of mandrels 140A-D and fromhorizontal surfaces. Spacer 144 thickness is chosen to be the same asthat of the desired width of a final sub-lithographic structure(factoring in any etch film erosion). In the example shown, thesub-lithographic structure being generated are fins, but the teachingsof the invention are applicable to a wide variety of SIT formedstructures such as but not limited to gates, resistors, etc. In anyevent, spacers 144 are turned on the vertical walls of mandrel(s) 140and these spacers determine the final pattern widths and tolerances ofthe components being formed in substrate 108.

Typically, at this stage of a SIT process, mandrels 140 are removed frombetween their respective spacers 144, and the pattern image created fromspacers 144 is transferred (e.g., by a reactive ion etch (RIE)) intohard mask 130 on substrate 108. Hard mask 130 is then used to patternthe sub-lithographic structures (e.g., tins, gates, etc.) in substrate108 in region 120. However, in contrast to conventional SIT processing,as shown in FIGS. 2-4, as a first step in a process according toembodiments of the invention to create a larger registration mark duringSIT processing, at least one mandrel is selected that is covered by amask such that removal of an uncovered group of the plurality ofmandrels 140C, 140D leaves spacers 144 while preventing removal of theat least one selected mandrel 140A, 140B. It is envisioned that thisselective removal of mandrels may be performed in a number of ways. Inone example, a mask 150 may be formed over at least one selected mandrel140A, 140B of plurality of mandrels 140. Mask 150 may be anyconventional mask material, e.g., a resist. While two mandrels 140A,140B have been selected, any number of mandrels desired to generate aparticular size registration mark 100 (FIGS. 7A-B) may be selected to becovered by mask 150. An uncovered group of mandrels 140C, 140D is alsoformed.

As shown in FIG. 3, a next step may include removing the uncovered groupof the plurality of mandrels 140C, 140D (FIG. 2) leaving spacers 144thereof. This step may be referred to as a “mandrel pull.” Mandrels140C, 140D may be removed using any conventional process 152 selectiveto hard mask 130, e.g., a RIE, a hydrogen bromide (HBr) containingplasma, etc. As shown in FIG. 4, however, mask 150 prevents removal ofat least one selected mandrel 140A, 140B. Consequently, as shown in FIG.4, after removing mask 150 (FIG. 3), selected mandrels 140A, 140B remainintact. Mask 150 may be removed using any conventional mask strip, e.g.,using a wet chemistry, a dry ash, etc. While a particular embodiment ofremoving an uncovered group of mandrels 140C, 140D has been illustrated,it is understood that other mechanisms may also be employed. Forexample, a highly selective wet etch may be employed as an alternative.

FIGS. 5-7A show etching to pattern the sub-lithographic structures andregistration mark into hard mask 130 using spacers 144 as a pattern ofthe sub-lithographic structure and the at least one selected mandrel140A, 140B and adjacent spacer 144 for the registration mark, and formregistration mark 100 in semiconductor layer 110 using the at least oneselected mandrel 140A, 140B and patterned hard mask 130. As illustrated,the etching may include a number of etching steps. A first etch 160(FIG. 5) may remove hard mask 130 between plurality of spacers 144,i.e., etch to pattern the sub-lithographic structures into hard mask130, using spacers 144 as a pattern of the sub-lithographic structure.The first etch may also use the at least one selected mandrel 140A, 140Bwith corresponding spacers as a mask for etching hard mask 130. Someportion of selected mandrels 140A, 140B may be removed during the firstetch. A second etch 162 (FIG. 6) may remove semiconductor layer 110using patterned hard mask 130 (where spacers 144 existed) and at leastone selected mandrel 140A, 140B and corresponding patterned underlyinghard mask 130 as a mask. That is, second etch 162 may form thesub-lithographic structures in semiconductor layer 110 using patternedhard mask 130, and may form registration mark 100 (FIGS. 7A-B) insemiconductor layer 110 using at least one selected mandrel 140A, 140Band underlying patterned hard mask. Second etch 162 may also includeetching at least one selected mandrel 140A, 140B (or what remainsthereof after first etch 160). First etch 160 may include any now knownor later developed chemistry for etching hard mask 130 such as but notlimited to a fluorocarbon reactive ion etch (RIE), etc. Second etch 162may include any now known or later developed chemistry for removingsemiconductor layer 110 such as but not limited to reactive ion etch(RIE). While two etches 160, 162 have been described relative to FIGS. 5and 6, it is understood that one or more than two etches may beemployed, where desired and appropriate chemistries can attain thedesired results. Other etching processes may also be employed with firstand second etches 160, 162 (FIGS. 5 and 6), such as a wet etch to removespacers 144 (see FIG. 6), e.g., hydrofluoric acid (HF) based for oxidespacers. FIG. 7A shows an optional etch 163 to remove hard mask 130,e.g., by a conventional wet etch for nitride. It is possible, however,to allow hard mask 130 (FIG. 6) to remain for later use.

Referring to FIGS. 7A-B, a semiconductor structure 180 formed by theabove-described processing is illustrated. FIG. 7A shows across-sectional view of region 120, and FIG. 7B shows a plan view ofregion 120. Semiconductor structure 180 may include a registration mark(alignment or overlay mark) 100 including lithographic sized features182 (e.g., approximately 76 nm pitch or larger), and a plurality ofsub-lithographic structures 184 adjacent to registration mark 100 (e.g.,less than approximately 76 nm pitch). In this embodiment, registrationmark 100 includes sections of a semiconductor layer 110 (in structure180), each section having a width greater than a width of each of theplurality of sub-lithographic structures 184. Registration mark 100 maybe any size selected by a user based on selection of mandrels 140A, 140B(e.g., 8 microns), thus registration mark 100 may be larger thansub-lithographic structures 184. Conventional subsequent processing maydelineate registration mark 100 as either an alignment mark or anoverlay mark as it may be used for either function depending on itslocation, layers subsequently built thereover, etc. Subsequentprocessing may also continue to alter or build onto sub-lithographicstructures 184 to generate other functional IC components, such asFINFETS.

Referring to FIGS. 8-15, alternative embodiments of the above-describedprocessing are illustrated. Methods according to the alternativeembodiments may start with substrate 108, e.g., an SOI or bulksubstrate. As illustrate, substrate 108 includes semiconductor layer 110overlaying insulator layer 112, which may be over substrate 114.Alternatively, as noted, substrate 108 may include a bulk semiconductorlayer 110. Hard mask 130 may be formed over substrate 108.

In FIG. 8, methods according to the alternative embodiments of theinvention may include forming a plurality of mandrels 240 oversemiconductor layer 110, and in particular, over hard mask 130. Unlessotherwise stated, the materials of the processes of FIGS. 8-15 mayinclude the same material as described relative to the FIGS. 1-7Bembodiment, and may be formed by the same processes. As describedherein, mandrel formation may be performed as part of a sidewall imagetransfer (SIT) process over a first region 220. While four mandrels240A-240D have been illustrated, it is understood that any number ofmandrels may be provided. Mandrels 240A-D may be formed by depositingsacrificial material and then patterning the material into the pluralityof mandrels 240 in any now known or later developed manner. A spacerlayer 244 may then be formed over semiconductor layer 110 and hard mask130 adjacent to the walls of mandrels 240A-D. Spacer layer 244 may beformed, for example, by depositing spacer material over each mandrelsuch as a thin conformal oxide layer. Spacer layer 244 may have athickness of, for example, approximately 5-20 nm. As will be discussedrelative to FIGS. 13 and 14, another, second region 222 that istypically distanced from first region 220, may also be processed duringparts of the method according to embodiments of the invention. Secondregion 222, however, is intended for non-SIT processing in which, forexample, typical lithographic sized structures are formed such as butnot limited to MOSFETS, resistors, etc.

In contrast to the FIGS. 1-7B embodiment, in FIG. 9, at least onemandrel 240A, 240B may be selected, and a mask 250 may be formed overthe at least one selected mandrel 240A, 240B of plurality of mandrels240, prior to the spacer etch. Mask 250 may be any conventional maskmaterial, e.g., a resist. Although not shown, as will be discussedrelative to FIG. 13, mask 250 may be a mask configured to be used in asecond region 222 for non-SIT processes, but also employed to coverselected mandrel(s) 240A, 240B to create a registration mark 200 (FIGS.13-14), as will be described. While two mandrels 240A, 240B have beenselected, any number of mandrels desired to generate a particular sizeregistration mark 200 (FIG. 13) may be selected to be covered by mask250. An uncovered group of mandrels 240C, 240D remain uncovered by mask250.

As also shown in FIG. 9, spacers 246 may then be formed oversemiconductor layer 110 and, more particularly, hard mask 130 adjacentto the uncovered group of mandrels 240C and 240D, which are not coveredby mask 250. The etching also exposes, among other areas, a surfacebetween mandrels 240C, 240D and tops of mandrels 240C, 240D). The etchmay include, for example, an anisotropic etch to remove the conformaloxide layer from the top of mandrels 240C, 240D and from horizontalsurfaces. No spacers, however, are formed adjacent mandrels 240A, 240Bcovered by mask 250. Spacers 246 have a thickness chosen to be the sameas that of the desired width of a final sub-lithographic structure(factoring in any etch film erosion). In the example shown, thesub-lithographic structure being generated are fins, but the teachingsof the invention are applicable to a wide variety of SIT formedstructures such as but not limited to gates, resistors, e any event,spacers 246 are formed on the vertical walls of mandrel(s) 240C, 240Dand these spacers determine the final pattern widths and tolerances ofthe components being formed in SOI substrate 108.

As shown in FIG. 10, a next step may include removing uncovered group ofmandrels 240C, 240D (FIG. 9) leaving spacers 246 thereof. This step maybe referred to as a “mandrel pull.” Mandrels 240C, 240D may be removedusing any conventional process, e.g., a RIE 252. While a particularembodiment of removing mandrels 240C, 240D has been illustrated, it isunderstood that other mechanisms may also be employed. For example, ahighly selective wet etch may be employed as an alternative. As shown inFIG. 10, however, mask 250 prevents removal of at least one selectedmandrel 240A, 240B.

Consequently, as shown in FIG. 11, after removing mask 250 (FIG. 10),mandrels 240A, 240B remain intact, along with spacer layer 244thereover. Mask 250 may be removed using any conventional mask strip258, e.g., using a wet chemistry, a dry ash, etc. Hard mask 130 is thenetched into a sub-lithographic pattern by using spacers 246 as a patternof the sub-lithographic structure, e.g., anisotropic dry etch 258.

FIGS. 12 and 13 show etching to: form sub-lithographic structures 258(FIG. 13) in semiconductor layer 110 using patterned hard mask 130, andform registration mark 200 over semiconductor layer 110 using at leastone selected mandrel 240A, 240B. As illustrated, the etching may includea number of etching steps. A first etch 260 (FIG. 12) may etch hard mask130 and, in particular, the upper pad nitride layer and removes spacerlayer 244 and spacer 246. First etch 260 may include any now known orlater developed chemistry for etching spacers 246 and spacer layer 244such as but not limited to a fluorocarbon reactive ion etch (RIE), a wethydrofluoric (HF) etch, etc. Second etch 262 (FIG. 13) may removesemiconductor layer 110 using patterned hard mask 130 (where spacers 246and spacer material 244 were not present, and removing the thinner padoxide layer of hard mask 130). At least one selected mandrel 240A, 240Bwith adjacent hard mask 130 (where mask 250 covered) are also etched.Second etch 262 may also include etching a part of at least one selectedmandrel 240A, 240B, which acts to shorten the mandrels but notcompletely remove them. Second etch 262 may include any now known orlater developed chemistry for removing semiconductor layer 110 such asbut not limited to reactive ion etch (RIE). HBr or Cl₂ plasma RIE can beused. While two etches 260, 262 have been described, it is understoodthat one or more than two etches may be employed, where desired andappropriate chemistries can attain the desired results.

FIG. 13 also shows processing on a second region 222 of substrate 108,which may occur along with the SIT processing. In this fashion, duringnon-SIT processing of structures in second region 222, a registrationmark 200 (FIGS. 13 and 14) can be created in first region 220 undergoingSIT processing. Again, the lithographic processing illustrated in secondregion 222 is not meant to be specific; and practically any form oflithographic semiconductor structure may be formed in second region 222.In addition, the substrate in second region 222 is illustrated in asimplified manner for clarity.

FIG. 14 shows another etch 263 to etch upper pad nitride of hard mask130 adjacent mandrels 240A, 240B. In an alternative to FIG. 14, thisetch may leave just the thinner pad oxide of hard mask 130. This etchcan be done in subsequent processes to form part of an active region ontop of fins to increase device region. However, hard mask 130 is stillcovered or protected by registration mark 200. Registration mark 200includes part of mandrels 240A, 240B (FIG. 10) and hard mask 130 withthe dimension of mandrels 240 (FIG. 10), which is higher and wider thanthe sub-lithographic dimension of structures 284, resulting in betteroptical contrast than sub-lithographic pattern only.

Referring to FIGS. 14-15, a semiconductor structure 280 formed by theabove-described processing is illustrated. FIG. 14 shows across-sectional view of first and second regions 220, 222 with hard mask130 removal by anisotropic etching from semiconductor layer 110, andFIG. 15 shows a plan view of only first region 220. Semiconductorstructure 280 may include a registration mark 200 including lithographicsized features 282 (e.g., approximately 76 nm pitch or larger), and aplurality of sub-lithographic structures 284 adjacent to registrationmark 200 (e.g., less than approximately 76 nm pitch). In thisembodiment, registration mark 200 includes mandrel(s) 240A, 240B (orwhat is left after etching) over hard mask 130 over semiconductor layer110, the semiconductor layer 110 being wider than the mandrels and thehard mask. Here, in contrast to mark 100 (FIGS. 7A-B) and due to mask250 covering portions of spacer layer 244 over hard mask 130 adjacentmandrel(s) 240A, 240B, mark 200 includes hard mask 130 and mandrel(s)240A, 240B. In this fashion, as shown in FIG. 15, hard mask 130 makes uppart of mark 200 along with the remaining portions of the selectedmandrel(s) 240A, 240B. Registration mark 200 may be any size selected bya user based on a size of selected mandrel(s) 240A, 240B dimensions(FIG. 8). The dimensions of mask 250 that overlays spacer layer 244(FIGS. 10-11) does not contribute to overlay detection, but ratherprotects the area of mark 200 during SIT processes as described in thisembodiment. The distance between registration mark 200 and a boundary ofmask 250 can be adjusted for alignment or overlay mark detectionequipment requirements, e.g., more than 5 um can be an example of stateof art tool capability. In contrast to the FIGS. 1-7B embodiment,registration mark 200 is thicker because the mark includes part ofsemiconductor layer 110, selected mandrel(s) 240A, 240B and hard mask130. However, semiconductor layer 110 may not contribute to markdetection directly. The thickness of selected mandrel(s) 240A, 240B andhard mask 130 can be adjusted without affecting electrical property ofthe final product to optimize optical properties of registration mark200 for the particular lithography or overlay equipment used. Asregistration mark 200 is taller with different material combination thanthe first embodiment of this invention, it may provide improved opticalcontrast compared to conventional systems and the FIGS. 1-7B embodiment.Conventional subsequent processing may delineate registration mark 200as either an alignment mark or an overlay mark as it may be used foreither function depending on its location, layers subsequently builtthereover, etc. Subsequent processing may also continue to alter orbuild onto sub-lithographic structures 284 to generate other functionalIC components, such as FINFETS.

The processing and semiconductor structures described herein allow for afaster yield ramp and better overall yield levels that would normally belimited by the alignment or overlay mark. In addition, the processingallows for more options of mark designs which can be specifically tunedto be optimized for the mark identification system in question.Consequently, structures are no longer isolated to only structures withminimum width based on the SIT process.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A method of forming a registration mark duringformation of sub-lithographic structures on a substrate, the methodcomprising the steps of: forming a plurality of mandrels over a hardmask over a semiconductor layer, each mandrel including a spaceradjacent thereto; selecting at least one selected mandrel of theplurality of mandrels and forming a mask over the at least one selectedmandrel; removing the plurality of mandrels leaving the spacers, themask preventing removal of the at least one selected mandrel; removingthe mask; first etching to pattern the sub-lithographic structures andthe registration mark into the hard mask using the spacers as a patternof the sub-lithographic structure and the at least one selected mandreland adjacent spacer for the registration mark; and second etching toform the sub-lithographic structures in the semiconductor layer usingthe patterned hard mask and to form the registration mark in thesemiconductor layer using the at least one selected mandrel and thepatterned hard mask.
 2. The method of claim 1, wherein the secondetching includes etching the semiconductor layer using the patternedhard mask and the at least one selected mandrel as a mask.
 3. The methodof claim 2, wherein the second etching also includes removing the atleast one selected mandrel.
 4. The method of claim 1, wherein the hardmask includes a silicon nitride layer and a silicon oxide layer.
 5. Themethod of claim 1, wherein each mandrel includes a material chosen froma group consisting of polysilicon, amorphous silicon or amorphouscarbon.
 6. The method of claim 1, further comprising forming alithographic semiconductor structure using the mask in a region of thesubstrate distal to the sub-lithographic structures.
 7. The method ofclaim 1, wherein the forming of the plurality of mandrels over asemiconductor layer and the spacer forming includes: depositing andpatterning a material into the plurality of mandrels; depositing aspacer layer over each mandrel; and etching to form the spacers, exposea surface of the hard mask between the mandrels and expose a top of eachmandrel.
 8. A method of forming a registration mark during formation ofsub-lithographic structures on a substrate, the method comprising thesteps of: forming a plurality of mandrels over a hard mask over asemiconductor layer; forming a conformal spacer material covering a topand side of the mandrels and in between the mandrels; selecting at leastone selected mandrel and forming a mask over the at least one selectedmandrel; forming a spacer adjacent each of an uncovered group of theplurality of the mandrels that are uncovered by the mask; removing theuncovered group of mandrels uncovered by the mask leaving the spacers,while preventing removal of the at least one selected mandrel using themask; removing the mask; first etching to pattern the sub-lithographicstructures into the hard mask, using the spacers as a pattern of thesub-lithographic structure; and second etching to: form thesub-lithographic structures in the semiconductor layer using thepatterned hard mask, and form the registration mark over thesemiconductor layer using the at least one selected mandrel.
 9. Themethod of claim 8, wherein the second etching includes etching to removethe spacers and etching the semiconductor layer using the patterned hardmask and the at least one selected mandrel as a mask.
 10. The method ofclaim 8, wherein each mandrel includes a material selected from thegroup consisting of: polysilicon, amorphous silicon or amorphous carbon.11. The method of claim 8, further comprising forming a lithographicsemiconductor structure using the mask in a region of the substratedistal to the sub-lithographic structures.
 12. The method of claim 8,wherein the forming of the plurality of mandrels over a semiconductorlayer and the spacer forming includes: depositing and patterning amaterial into the plurality of mandrels; depositing a spacer layer overeach mandrel; and etching to form the spacer adjacent each of theplurality of mandrels, expose a surface of the hard mask between themandrels and expose a top of each mandrel.
 13. The method of claim 8,wherein the forming of the plurality of mandrels, the mask forming andthe spacer forming includes: depositing and patterning a material intothe plurality of mandrels; depositing a spacer layer over each mandrel;selecting the at least one selected mandrel and forming the mask overthe at least one selected mandrel of the plurality of mandrels; andetching to form the spacers adjacent each of the uncovered group of theplurality of mandrels uncovered by the mask, expose a surface of thehard mask between the uncovered group of the plurality of mandrels andexpose a top of each of the uncovered group of the plurality ofmandrels.
 14. The method of claim 13, wherein a portion of the spacerlayer over the hard mask and adjacent each mandrel is covered by themask.
 15. The method of claim 13, wherein the registration mark includesa portion of each mandrel covered by the mask.
 16. The method of claim8, wherein the hard mask includes a silicon nitride layer and a siliconoxide layer.
 17. A semiconductor structure on a substrate, thesemiconductor structure comprising: a registration mark includinglithographic sized features; and a plurality of sub-lithographicstructures adjacent to the registration mark.
 18. The semiconductorstructure of claim 17, further comprising a lithographic semiconductorstructure in a region of the substrate distal to the sub-lithographicstructures.
 19. The semiconductor structure of claim 17, wherein theregistration mark includes sections of a semiconductor layer, eachsection having a width greater than a width of each of the plurality ofsub-lithographic structures.
 20. The semiconductor structure of claim17, wherein the registration mark includes: a mandrel over a hard maskover a semiconductor layer, the semiconductor layer being wider than themandrel and the hard mask.